HAF2007技术资料参数供应价格日立Hitachi-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HAF2007	文件：42.9 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件：42.9 Kbytes 页数：6 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HAF2007	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007	文件：300 bytes Page：1 Pages	Silicon N Channel MOS FET Series Power Switching Description\nThis FET has the over temperature shut-down capability sensing to the junction temperature.\nThis FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over po • Logic level operation (4 to 6 V Gate drive)\n• High endurance capability against to the short circuit\n• Built-in the over temperature shut-down circuit\n• Latch type shut-down operation (Need 0 voltage recovery);	Renesas 瑞萨	Renesas
HAF2007-90L	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007-90S	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007-90STL	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007-90STR	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007L	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007L	文件：42.9 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件：42.9 Kbytes 页数：6 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HAF2007S	文件：42.9 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件：42.9 Kbytes 页数：6 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

技术参数

通道数：
Single
汽车业：
YES
VDSS (V)：
60
ID (A)：
5
RDS (ON)(mΩ) 最大值@4V至4.5V：
120
RDS (ON)(Ω) 典型值@4V至4.5V：
73
RDS (ON)(mΩ) 最大值@8V至10V：
75
RDS (ON)(Ω) 典型值@8V至10V：
55
Pch (W)：
20
Tsd (°C) 典型值：
175
封装类型：
DPAK(S)
生产状态：
Non-promotion

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市欧立现代科技有限公司	HAF2007	HITACHI	24+	TO252	6980	原装现货,可开13%税票	询价
深圳市一线半导体有限公司	HAF2007-91STL	RENESAS	24+	TO252	2645		询价
深圳市弘为电子有限公司	HAF2007-91STL	RENESAS	24+	TO252	1068	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	HAF2007-90STL	RENESAS	25+	TO-252	14955	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市澳亿芯电子科技有限公司	HAF2007-90STL-E	RENESAS	11+PBF	TO-252	12400	现货	询价
艾睿（深圳）半导体有限公司	HAF2007-90S	VBsemi(台湾微碧)	2447	TO252	105000	2500个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市威尔健半导体有限公司	HAF2007-90STL-E	VBSEMI/台湾微碧	23+	TO252	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	HAF2007-90STL-E	RENESAS/瑞萨	2022+	TO-252	9400	原厂代理终端免费提供样品	询价
贸泽芯城（深圳）电子科技有限公司	HAF2007L	KA	23+	TO-	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	HAF2007-90STL-E	VBsemi	21+	TO252	10065	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多HAF2007供应商更新时间2025-10-10 10:12:00

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