| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
TRANSISTOR(NPN) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
NPNPlasticEncapsulateTransistor FEATURES ExcellenthFELinearity Lownoise ComplementarytoA733 | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
TO-92Plastic-EncapsulateTransistors SOT-92Plastic-EncapsulateNPNTransistors | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. | DAYA | ||
NPNTRANSISTOR AFOUTPUTAMPLIFIER | STANSONStanson Technology Stanson 科技 | STANSON | ||
NPNTransistors
| WEITRONWEITRON 威堂電子科技 | WEITRON | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity. :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •LowNoise:NF=1dB(Typ.).atf=1kHz •ComplementarytoKTA733B(O,Y,GRclass). | KECKEC CORPORATION KEC株式会社 | KEC | ||
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
GENERALPURPOSETRANSISTORNPN200mW150mA50V DESCRIPTION The C945isavailableinSOT23package FEATURES PowerDissipation PCM:0.2W(Tamb=25°C) CollectorCurrent ICM:0.15A Collector-BaseVoltage V(BR)CBO:60V OperatingandStorageJunctionTemperatureRange TJ,TSTG:-55°Cto+150°C AvailableinSOT23packag | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
NPNSiliconPlanarEpitaxialTransistor NPNSILICONPLANAREPITAXIALTRANSISTOR 2SC945ISANNPNSILICONPLANAREPITAXIALTRANSISTORDESIGNEDFORAUDIOFREQUENCYAMPLIFIER.ITISCOMPLEMENTARYTOTHEPNPTYPE2SA733. | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
NPNgeneralpurposetransistor DESCRIPTION NPNtransistorinaTO-92(SOT54)plasticpackage.PNPcomplement:2PA733. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.50V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
HighVoltage DESCRIPTION ·HighVoltage ·ExcellenthFElinearity APPLICATIONS ·DsignedforuseindriverstageofAFamplifierandlowspeedswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description DesignedforuseindriverstageofAFamplifierapplications | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity. :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •LowNoise:NF=1dB(Typ.).atf=1kHz •ComplementarytoKTA733. | KECKEC CORPORATION KEC株式会社 | KEC | ||
NPNSiliconTransistor(AFamplifierandlowspeedswitching) DESCRIPTION The2SC945isdesignedforuseindriverstageofAFamplifierandlowspeedswitching. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
Plastic-EncapsulateTransistor | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
SineWaveClockOscillator | CRYSTEKCRYSTAL Crystek Corporation | CRYSTEKCRYSTAL | ||
TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •1N941BUR-1,1N943BUR-1,1N944BUR-1AND1N945BUR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/157 •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •11.7VOLTNOMINALZENERVOLTAGE •METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
- 性质：
- 封装形式：
- 极限工作电压：
60V
- 最大电流允许值：
0.1A
- 最大工作频率：
150MHZ
- 引脚数：
- 可代换的型号：
- 最大耗散功率：
0.25W
- 放大倍数：
- 图片代号：
NO
- vtest：
60
- htest：
150000000
- atest：
.1
- wtest：
.25
详细参数
- 型号：
H945
- 制造商：
HUASHAN
- 制造商全称：
HUASHAN
- 功能描述：
NPN SILICON TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
03+ |
TO-92 |
50000 |
询价 | |||
HIT |
22+ |
T+R |
6980 |
原装现货,可开13%税票 |
询价 | ||
HITACHISEMIC |
05+ |
原厂原装 |
49190 |
只做全新原装真实现货供应 |
询价 | ||
日立 |
24+ |
TO-92 |
5000 |
只做原装公司现货 |
询价 | ||
TO-92 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
原装RENESAS |
2023+ |
TO-92 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
RENESAS |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
HITACHI/日立 |
23+ |
TO-92 |
90000 |
原装原盘 |
询价 | ||
HITACHI/日立 |
TO-92 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
HITACHI/日立 |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
询价 |
