P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

Features • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A • RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM

文件：41.23 Kbytes 页数：4 Pages

HSMC

华昕

Low Voltage MOSFET

HSMC

华昕

Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

文件：94.72 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

文件：219.85 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

P-Channel Logic Level PowerTrench MOSFET

文件：101.08 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体