H7N0307LM规格书应用电路原装现货瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
H7N0307LM	文件：105.17 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source 文件：105.17 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
H7N0307LMTL-E	文件：105.17 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source 文件：105.17 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
H7N0307LM	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas
H7N0307LS	文件：105.17 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source 文件：105.17 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
H7N0307LSTL-E	文件：105.17 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source 文件：105.17 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

更多H7N0307LM供应商更新时间2025-10-8 15:52:00