丝印：H30EPR7；Package：PG-TO247-3-U04；TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage

Features • VCE = 670 V • IC = 30 A • Pin-to-pin creepage distance > 4.8 mm • Pin-to-pin clearance distance > 3.4 mm • Optimized monolithic diode for PFC applications • Improved EMI behavior with lower dv/dt • Very low VCEsat = 1.4 V (typ.) at 25°C • Stable temperature behavior • Low tempe

文件：1.38398 Mbytes 页数：14 Pages

Infineon

英飞凌