IQDH35N03LM5CG

Marking：H3503LC；Package：PG-TTFN-9；OptiMOSTM 5 Power-Transistor, 30 V

Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQFH36N04NM6

Marking：H36N04NM6；Package：PG-TSON-12；MOSFET OptiMOSTM6 Power-Transistor, 40 V

Features •OptimizedforLowVoltageDrivesapplications •OptimizedforBatteryPoweredapplications •OptimizedforSynchronousRectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •H

IQFH39N04NM6

Marking：H39N04NM6；Package：PG-TSON-12；MOSFET OptiMOSTM6 Power-Transistor, 40 V

Features •OptimizedforLowVoltageDrivesapplications •OptimizedforBatteryPoweredapplications •OptimizedforSynchronousRectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •Pb-freeleadplating;RoHS

KSC2757

Marking：H3*；Package：SOT-23；Mixer Oscillator for VHF Tuner

MixerOscillatorforVHFTuner •HighCurrentGainBandwidthProduct:fT=1100MHz(TYP)

NB3H60113GH3

Marking：H3M；Package：WDFN8；2.5 V Programmable OmniClock Generator with Differential LVDS Output

TheNB3H60113GH3,whichisamemberoftheOmniClockfamily, isaone−timeprogrammable(OTP),lowpowerPLL−basedclock generatorthatsupportsdifferential125MHzfrequencyoutput. ThedeviceacceptsasingleendedLVCMOSreferenceClockasinput. ItgeneratesonedifferentialLVDSoutput.

RT9011-PMGQW

Marking：H3*；Package：WDFN-82x2；Portable Power Management 300mA Dual LDO Regulator

GeneralDescription TheRT9011isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features •WideOperatingVoltageRanges:2.5Vto5.5V •Low-NoiseforRFApplica

RT9166-17PVL

Marking：H3-***；Package：SOT-23；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features •LowQuiescentCurrent(Typically220μA) •

STH3N150-2

Marking：H3N150；Package：H2PAK-2；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features •100avalanchetested •IntrinsiccapacitancesandQgminimized •Highspeedswitching •FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

TC1189-RECT

Marking：H3**；Package：SOT-25；MAX8863/64 Pin Compatible, Low Dropout, 120 mA Linear Regulators

GeneralDescription TheTC1188andTC1189arefixedoutput,lowdropoutlinearregulatorsthatoperatefroma2.7Vto6.0Vinputvoltagesource.Theoutputiscapableofdeliveringupto120mAwhileconsumingonly50µAofquiescentcurrent.Thelowdropoutvoltage,120mV,maketheTC1188andT

TPC6601

Marking：H3A；Package：VS-12；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf