HMC374

Marking：H374；SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz

Features SingleSupply:Vdd=+2.75to+5.5V LowNoiseFigure:1.5dB HighOutputIP3:+37dBm NoExternalMatchingRequired TypicalApplications TheHMC374/HMC374Eisidealfor: •Cellular/PCS/3G •WCS,MMDS&ISM •FixedWireless&WLAN •PrivateLandMobileRadio

IHW30N110R3

Marking：H30R1103；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode

Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •LowVCEsat •Easyparallelswitchingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •QualifiedaccordingtoJEDECfo

IHW30N110R5

Marking：H30KR5；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features •VCE=1100V •IC=30A •Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •VerylowVCEsat •Easyparallelswitchingcapabilityduetopositivetemperat

IHW30N135R3

Marking：H30R1353；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode

Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswit

IHW30N135R3

Marking：H30R1353；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode

Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavi

IHW30N140R5L

Marking：H30QR5L；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features •VCE=1400V •IC=30A •Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •VerylowVCEsat •Easyparallelingcapabilityduetopositivetemperaturecoe

IHW30N90R

Marking：H30R90；Package：PG-TO-247-3；Reverse Conducting IGBT with monolithic body diode

Features: •1.5VtypicalsaturationvoltageofIGBT •TrenchandFieldstoptechnologyfor900Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCE(sat

IHW30N90T

Marking：H30T90；Package：TO-247-3；Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode

LowLossDuoPack:IGBTinTrenchStop®andFieldstoptechnologywithanti-paralleldiode Features: •1.1VForwardvoltageofantiparalleldiode •TrenchStop®andFieldstoptechnologyfor900Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestab

IKWH30N67PR7

Marking：H30EPR7；Package：PG-TO247-3-U04；TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage

Features •VCE=670V •IC=30A •Pin-to-pincreepagedistance>4.8mm •Pin-to-pinclearancedistance>3.4mm •OptimizedmonolithicdiodeforPFCapplications •ImprovedEMIbehaviorwithlowerdv/dt •VerylowVCEsat=1.4V(typ.)at25°C •Stabletemperaturebehavior •Lowtempe

IQDH35N03LM5

Marking：H3503L5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21