2Gb (16Mx8Banksx16) DDR3 SDRAM

The H2A402G1666B is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16Mbits x 8 banks by 16 bits. \nThis synchronous device achieves high speed double-data-rate transfer rates of \n• All inputs and outputs are compatible with SSTL_15 interface. \n• Eight Banks \n• Bust length: 4 with Burst Chop (BC) and 8. \n• CAS Latency (CL): 9, 10, 11 \n• Bi-directional Differential Data Strobe (DQS). \n• Data outputs on DQS, /DQS edges when read. \n• DM mask write data-in at the both ris;

Axeme