500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

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MCC

High Power single chip LED

文件：289.45 Kbytes 页数：4 Pages

ROITHNER

High Power single chip LED

文件：289.36 Kbytes 页数：4 Pages

ROITHNER

128Mb (2Mx4Banks×16) DDR2 SDRAM

The H2A31281656B is a 128M bits DDR2 SDRAM, organized as 2,097,152words x 4 banks x 16 bits. The -25 grade parts are compliant to the DDR2 800 (6-6-6) specification . The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.\nJEDEC specifications require the refresh rate to double when \n• Power Supply: VDD, VDDQ = 1.8 V ± 0.1V \n• Double Data Rate architecture: two data transfers per clock cycle \n• Burst Length: 4 and 8 \n• Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data \n• Edge-aligned with Read data and center-aligned with Write d;

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512Mb (8Mx4Banks×16) DDR2 SDRAM

The H2A35121656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec \n• All inputs and outputs are compatible with SSTL_18 interface. \n• Four Banks \n• Bust length: 4 and 8.  Programmable CAS Latency (CL): 3, 4, 5, 6 & 7. \n• Write Latency (WL) =Read Latency (RL) -1. \n• Bi-directional Differential Data Strobe (DQS). \n• Data outputs on DQS, /DQS edges when read.;

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