丝印：H25N50ANFT；Package：TO-220F；500V N-Channel Planar MOSFET

Features RDSON=0.18Ω @Vgs=10V, Id=12.5A Ultra Low gate Charge(typical 80nC) Low Crss (typical 22pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.6294 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H25N50ANV；Package：TO-3P；500V N-Channel Planar MOSFET

Features RDSON=0.18Ω @Vgs=10V, Id=12.5A Ultra Low gate Charge(typical 80nC) Low Crss (typical 22pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.6294 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H25N50ANW；Package：TO-247；500V N-Channel Planar MOSFET

Features RDSON=0.18Ω @Vgs=10V, Id=12.5A Ultra Low gate Charge(typical 80nC) Low Crss (typical 22pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.6294 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H25QR5L；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features • VCE = 1400 V • IC = 25 A • Powerful monolithic body diode with low forward voltage designed for soft commutation only • Very tight parameter distribution • High ruggedness, temperature stable behavior • Very low VCEsat • Easy paralleling capability due to positive temperature coe

文件：1.47705 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：H25R；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.40246 Mbytes 页数：51 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.40246 Mbytes 页数：51 Pages

TI

德州仪器

丝印：H25R；Package：SOT-23(DBV)；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.60083 Mbytes 页数：56 Pages

TI

德州仪器