丝印：H20T65W；Package：TO-247；Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：880.31 Kbytes 页数：9 Pages

HUIXIN

慧芯电子

丝印：H20T65W；Package：TO-247；Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：880.31 Kbytes 页数：9 Pages

HUIXIN

慧芯电子