MA7001AA

Marking：H2YWX；Package：SOT23-3L；MicroPower, Ultra-sensitive Hall Effect Switch

GENERALDESCRIPTION MA7001isathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe outp

MA7001B553A

Marking：H2YW；Package：SOT553；MicroPower, Ultra-sensitive Hall Effect Switch

GENERALDESCRIPTION MA7001isathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe outp

MA7001EAA

Marking：H2YWX；Package：SOT23-3L；MicroPower, Ultra-sensitive Hall Effect Switch

GENERALDESCRIPTION MA7001Eisathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe out

PESDNC2FD12VBHD2

Marking：H2C；Package：DFN1006-2L；Bi-directional 12V Normal Capacitance ESD Protecto r

Description ThePESDNC2FD12VBHD2protectssensitivesemiconductorcomponentsfromdamageorupsetdueto electrostaticdischarge(ESD)andothervoltageinducedtransientevents. Itgivesdesignertheflexibilitytoprotectonebi-directionallineinapplicationswherearraysarenotpractical.

RT9012-NNGQW

Marking：H2*；Package：VDFN-82x2；300mA Dual LDO Regulator with POR

GeneralDescription RT9012isadualchannel,lownoise,andlowdropoutwiththesourcingabilityupto300mAandpower-onresetfunction.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features •WideOperatingVoltageRanges:2.5Vto5.5V •Low-Noise

SN74AUP1G125DBVR

Marking：H25R；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1Features 1•AvailableintheTexasInstrumentsNanoStar™ Package •LowStatic-PowerConsumption (ICC=0.9μAMaximum) •LowDynamic-PowerConsumption (Cpd=4pFTypicalat3.3V) •LowInputCapacitance(CI=1.5pFTypical) •LowNoise–OvershootandUndershoot

SN74AUP1G125DBVT

Marking：H25R；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1Features 1•AvailableintheTexasInstrumentsNanoStar™ Package •LowStatic-PowerConsumption (ICC=0.9μAMaximum) •LowDynamic-PowerConsumption (Cpd=4pFTypicalat3.3V) •LowInputCapacitance(CI=1.5pFTypical) •LowNoise–OvershootandUndershoot

SN74AUP1G126DBVR

Marking：H26R；Package：SOT23-5；Designed for 0.8V to 3.6V VCC Operation

GeneralDescription TheSN74AUP1G126isasinglenon-invertingbufferwith3−Stateoutputfromultralowpowerseries, whichcanoperatefroma0.8Vto3.6Vsupply.ThisdeviceisfabricatedwithadvancedCMOStechnologyto achieveultra-highspeedwithhighoutputdrive. Features Designed

SN74AUP2G125DCUR

Marking：H25R；Package：VSSOP；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES •AvailableintheTexasInstrumentsNanoStar™ Package •LowStatic-PowerConsumption (ICC=0.9mAMax) •LowDynamic-PowerConsumption (Cpd=4pFTypat3.3V) •LowInputCapacitance(CI=1.5pFTyp) •LowNoise–OvershootandUndershoot

TC1189-SECT

Marking：H2**；Package：SOT-25；MAX8863/64 Pin Compatible, Low Dropout, 120 mA Linear Regulators

GeneralDescription TheTC1188andTC1189arefixedoutput,lowdropoutlinearregulatorsthatoperatefroma2.7Vto6.0Vinputvoltagesource.Theoutputiscapableofdeliveringupto120mAwhileconsumingonly50µAofquiescentcurrent.Thelowdropoutvoltage,120mV,maketheTC1188andT