IHW20N135R3

Marking：H20R1353；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode

Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswit

IHW20N140R5L

Marking：H20QR5L；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features •VCE=1400V •IC=20A •Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •VerylowVCEsat •Easyparallelingcapabilityduetopositivetemperaturecoe

IHW25N140R5L

Marking：H25QR5L；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features •VCE=1400V •IC=25A •Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •VerylowVCEsat •Easyparallelingcapabilityduetopositivetemperaturecoe

IMH21

Marking：H21；Package：SOT-26；Dual digital transistors

Features Inadditiontothefeaturesofregulardigitaltransistors. 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathighcurrentlevels,IC=600mA. 3)TwoDTC614TchipsinaSMT

IMH22

Marking：H22；Package：SMT6；Dual digital transistors

Features Inadditiontothefeaturesofregulardigitaltransistors. 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathighcurrentlevels,IC=600mA. 3)TwoDTC663EchipsinaSMT

IMH23

Marking：H23；Package：SOT-26；Dual digital transistors

Features 1)Built-InBiasingResistors 2)TwoDTC643Tchipsinonepackage. 3)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 4)Thesetransistorscanbeusedathighcurrentlevels,IC=600mA. 5)Built-inbiasresis

IMH23

Marking：H23；Package：SOT-26；Dual digital transistors

Features 1)Built-InBiasingResistors 2)TwoDTC643Tchipsinonepackage. 3)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 4)Thesetransistorscanbeusedathighcurrentlevels,IC=600mA. 5)Built-inbiasresis

IMH24

Marking：H24；Package：SMT6；Dual digital transistors

Features Inadditiontothefeaturesofregulardigitaltransistors. 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathighcurrentlevels,IC=600mA. 3)TwoDTC623TchipsinaSMT

IQDH29NE2LM5

Marking：H29E2L5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 25 V

Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQDH29NE2LM5CG

Marking：H29E2LC；Package：PG-TTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 25 V

Features •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21