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H11F1SM

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

文件:338.65 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

H11F1SR2M

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

文件:338.65 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

H11F1SR2M

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件:2.07738 Mbytes 页数:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H11F1SR2M

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件:245.3 Kbytes 页数:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H11F1SR2VM

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件:245.3 Kbytes 页数:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H11F1SR2VM

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件:2.07738 Mbytes 页数:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H11F1SR2VM

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

文件:338.65 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

H11F1SVM

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

文件:338.65 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

H11F1SVM

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件:2.07738 Mbytes 页数:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H11F1SVM

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件:245.3 Kbytes 页数:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

产品属性

  • 产品编号:

    H11F1

  • 制造商:

    onsemi

  • 类别:

    隔离器 > 光隔离器 - 晶体管,光电输出

  • 包装:

    管件

  • 电压 - 隔离:

    5300Vrms

  • 接通 / 关断时间(典型值):

    25µs,25µs(最大)

  • 输入类型:

    DC

  • 输出类型:

    MOSFET

  • 电压 - 输出(最大值):

    30V

  • 电压 - 正向 (Vf)(典型值):

    1.3V

  • 工作温度:

    -55°C ~ 100°C

  • 安装类型:

    通孔

  • 封装/外壳:

    6-DIP(0.300",7.62mm)

  • 供应商器件封装:

    6-DIP

  • 描述:

    OPTOISOLTR 5.3KV PHOTO FET 6-DIP

供应商型号品牌批号封装库存备注价格
2015+
2500
公司现货库存
询价
FAIRCHILD/仙童
24+
DIP-6
580
只做原厂渠道 可追溯货源
询价
ON/FSC
24+
DIP
9200
绝对原装现货,价格低,欢迎询购!
询价
MOT
DIP-6
2050
正品原装--自家现货-实单可谈
询价
A
24+
DIP-6
4238
询价
FAIRCHILD
13+
DIP-6
34328
原装分销
询价
MOT/QTC
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
QTC
25+
DIP6
1800
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
QTC
04+
DIP-8
2000
询价
FSC
24+
DIP-6
5000
全现原装公司现货
询价
更多H11F1供应商 更新时间2025-10-4 16:01:00