丝印：H07；Package：SOT765-1；Triple buffer with open-drain outputs

1. General description The 74HC3G07; 74HCT3G07 is a triple buffer with open-drain outputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V

文件：209.87 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：H07；Package：SOT765-1；Triple buffer with open-drain outputs

1. General description The 74HC3G07-Q100; 74HCT3G07-Q100 is a triple buffer with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Cou

文件：209.18 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：H07；Package：SOT505-2；Triple buffer with open-drain outputs

1. General description The 74HC3G07; 74HCT3G07 is a triple buffer with open-drain outputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V

文件：209.87 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：H07；Package：SOT505-2；Triple buffer with open-drain outputs

1. General description The 74HC3G07-Q100; 74HCT3G07-Q100 is a triple buffer with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Cou

文件：209.18 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：H07；Package：VSSOP8；Triple buffer with open-drain outputs

文件：210.26 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：H07；Package：TSSOP8；Triple buffer with open-drain outputs

文件：210.26 Kbytes 页数：12 Pages

NEXPERIA

安世

ESD Protection Device

Description The HxxxD3xVxB series has been specifically designed to protect sensitive components which are connected to power data and transmission lines from overvoltage caused by ESD (electrostatic discharge) Applications • Computers and peripherals • Communication system • Notebooks, des

文件：305.87 Kbytes 页数：3 Pages

MULTICOMP

易络盟

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：61.51 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：61.51 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：61.51 Kbytes 页数：5 Pages

HSMC

华昕