High Power RF GaN on SiC HEMT 400 W, 50 V, 960 – 1215 MHz

GaN on SiC HEMT technologyBroadband internal input matchingTypical Pulsed CW performance; 960 – 1215 MHz; 50VOutput power = 410 WDrain Efficiency = 70 %Gain = 19 dBPulse width = 128 μsDuty cycle = 10 %Pb-free and RoHS compliant • GaN on SiC HEMT technology\n• Typical Pulsed CW performance; 960 – 1215 MHz; 50V\n• Drain Efficiency = 70 %\n• Pulse width = 128 μs\n• Pb-free and RoHS compliant\n;

MACOM

Package：H-37265J-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：400W GAN HEMT 50V 0.9-1.2GHZ FET

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