GTVA104001FA-V1中文资料High Power RF GaN on SiC HEMT 400 W, 50 V, 960 – 1215 MHz数据手册MACOM规格书

描述 Description

GaN on SiC HEMT technologyBroadband internal input matchingTypical Pulsed CW performance; 960 – 1215 MHz; 50VOutput power = 410 WDrain Efficiency = 70 %Gain = 19 dBPulse width = 128 μsDuty cycle = 10 %Pb-free and RoHS compliant

特性 Features

• GaN on SiC HEMT technology
• Typical Pulsed CW performance; 960 – 1215 MHz; 50V
• Drain Efficiency = 70 %
• Pulse width = 128 μs
• Pb-free and RoHS compliant

应用 Application

• L-Band Radar Amplifiers