Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, DC – 1400 MHz

Description The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC to 1400 MHz frequency band. It is a input matched, high efficiency device in a thermally-enhanced package with bolt-down flange. Features • GaN on SiC HEMT technology • Input ma

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Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 ??1215 MHz

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High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 – 1215 MHz

Input matched Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB Pb-free and RoHS compliant • Input matched\n•Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB\n•Pb-free and RoHS compliant;

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包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：AMPLIFIER, 1030MHZ, GTVA101K42EV

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Package：H-36275-4；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：GAN HEMT 50V 1400W 0.96-1.4GHZ

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Package：H-36275-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：GAN HEMT 50V 1400W 0.96-1.4GHZ

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