High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 – 1215 MHz

Input matched Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB Pb-free and RoHS compliant • Input matched\n•Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB\n•Pb-free and RoHS compliant;

MACOM

Package：H-36275-4；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：GAN HEMT 50V 1400W 0.96-1.4GHZ

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Package：H-36275-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：GAN HEMT 50V 1400W 0.96-1.4GHZ

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