型号：AP9101CAK6-ALTRG1；Package：SOT26；SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK

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美台半导体

型号：GTRA184602FC；Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

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型号：GTRA184602FC-V1；Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

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型号：GTRA184602FC-V1-R0；Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

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型号：GTRA184602FC-V1-R2；Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

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型号：GTRA214602FC；Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

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型号：GTRA214602FC-V1；Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED

型号：GTRA214602FC-V1-R0；Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED

型号：GTRA214602FC-V1-R2；Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

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型号：GTRA260502M；Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz

Description The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced DFN SMD package. Features • GaN on SiC HEMT technology • T

文件：762.29 Kbytes 页数：9 Pages

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