16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs

Functional Description The GS82564Z18/36 is a 288Mbit Synchronous Static SRAM. GSIs NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect

文件：431.04 Kbytes 页数：35 Pages

GSI

16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs

文件：431.04 Kbytes 页数：35 Pages

GSI

SYNCBURST SRAMs

• Industry-standard Synchronous Burst Interface\n• ZQ mode pin for user-selectable high/low output drive\n• LBO pin for Linear or Interleaved Burst mode\n• Byte Write (BW) and/or Global Write (GW) operation\n• Internal self-timed write cycle\n• Automatic power-down for portable applications\n• JEDEC;

GSI

16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs

Functional Description The GS82564Z18/36 is a 288Mbit Synchronous Static SRAM. GSIs NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect

文件：431.04 Kbytes 页数：35 Pages

GSI

16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs

文件：431.04 Kbytes 页数：35 Pages

GSI

SYNCBURST SRAMs

• Industry-standard Synchronous Burst Interface\n• ZQ mode pin for user-selectable high/low output drive\n• LBO pin for Linear or Interleaved Burst mode\n• Byte Write (BW) and/or Global Write (GW) operation\n• Internal self-timed write cycle\n• Automatic power-down for portable applications\n• JEDEC;

GSI

Package：119-BGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 288MBIT PAR 119FPBGA

GSI Technology Inc.