N-channel 650 V60A GaN Power HEMT in DFN8x8 package

These devices are N-channel 650 V Power GaN HEMTs based on proprietary E-mode GaN on silicon technology. The resulting product has extremely low on state resistance, very low input capacitance and zero reverse recovery charge making it especially suitable for applications which require superior powe

GaNPower

量芯微

UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS

DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology.

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NEC

瑞萨

QFP44

GENERALPL

上传：深圳市正纳电子有限公司

SMD

Gantong(感通)

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SOP8

SUNPLUS

凌阳

上传：深圳市恩智成科技有限公司