首页 >GPY0030B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AudiioDriiver | GENERALPLUSGeneralplus Technology Inc. 台湾凌通 | GENERALPLUS | ||
AudiioDriiver | GENERALPLUSGeneralplus Technology Inc. 台湾凌通 | GENERALPLUS | ||
30VN-ChannelEnhancementModeMOSFET Description TheIRLML0030usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=30VID=4.2A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Lowerswitchinglosses Features VDS(V)=30V RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
MOSFET Features VDS(V)=30V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
Lowerswitchinglosses Features VDS(V)=30V RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
MOSFET Features VDS(V)=30V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
HEXFETPowerMOSFET | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI |
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