插件封装场效应管

GSME

桂微

N-Channel Enhancement Mode Field Effect Transistor

Features • 80A, 75V(See Note), RDS(on)

文件：400.67 Kbytes 页数：6 Pages

HUASHAN

华汕电子器件

80A, 75V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. FEATURES * 80A, 75V, RDS(ON)=10mΩ @VGS=10V, ID=20A * Low gate charge ( typical 117nC) * H

文件：133.29 Kbytes 页数：3 Pages

UTC

友顺

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：903.93 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-220F full-pak for through hole.

文件：400.63 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-220F full-pak for through hole.

文件：400.63 Kbytes 页数：4 Pages

CET

华瑞