N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-220F full-pak for through hole.

文件：400.63 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

Super high dense cell design for extremely low RDS(ON).\nHigh power and current handing capability.\nLead free product is acquired.\nTO-220 & TO-263 & TO-220F full-pak for through hole.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-220F full-pak for through hole.

文件：400.63 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 75 Volts CURRENT 80 Ampere FEATURE * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Small package. (D2PAK) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CONSTRUCTION * N-Chan

文件：514.289 Kbytes 页数：2 Pages

CHENMKO

力勤

N-channel 75V 10m廓, 80A TO-220 Trench Power MOSFET

文件：206.55 Kbytes 页数：2 Pages

GSME

桂微