CEF80N75

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

BR80N75

N-CHANNELMOSFETinaTO-220PlasticPackage

CEB80N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CEP80N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CHM80N75NPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE75VoltsCURRENT80Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Smallpackage.(D2PAK) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. CONSTRUCTION *N-Chan

GMP80N75

N-channel75V10m廓,80ATO-220TrenchPowerMOSFET

HFP80N75

N-ChannelEnhancementModeFieldEffectTransistor

Features •80A,75V(SeeNote),RDS(on)

UTT80N75

80A,75VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTCUTT80N75isanN-ChannelpowerMOSFET,itusesUTC’sadvancedtechnologytoprovidecustomerswithaminimumon-stateresistance,lowgatechargeandhighswitchingspeed. FEATURES *80A,75V,RDS(ON)=10mΩ@VGS=10V,ID=20A *Lowgatecharge(typical117nC) *H