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DAM9N30S

N-ChannelEnhancementModeMOSFET

DACO

DACO

FQB9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP9N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.0A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF9N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFB9N30A

PowerMOSFET(Vdss=300V,Rds(on)=0.45ohm,Id=9.3A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB9N30A

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFB9N30APBF

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFB9N30APBF

HEXFET짰PowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationofastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatlowerdi

IRFInternational Rectifier

英飞凌英飞凌科技公司

SIHFB9N30A

PowerMOSFET

VishayVishay Siliconix

威世科技

供应商型号品牌批号封装库存备注价格
POSITRONIC INDUSTRIES
22+
SMD
518000
明嘉莱只做原装正品现货
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POS
1535+
243
询价
POSITRONICINDUSTRIES
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
POSITRONIC INDUSTRIES
2023+
SMD
11131
安罗世纪电子只做原装正品货
询价
XX
22+23+
SOT23-6
41257
绝对原装正品现货,全新深圳原装进口现货
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XX
2023+
SOT23-6
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
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XX
21+
SOT23-6
35200
一级代理/放心采购
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XX
22+
SOT23-6
360000
进口原装房间现货实库实数
询价
XX
22+
SOT23-6
50000
只做正品原装,假一罚十,欢迎咨询
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XX
22+
SOT23-6
72500
郑重承诺只做原装进口货
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更多GFP9N30供应商 更新时间2024-6-5 17:35:00