丝印：GF3；Package：SOT-23-3；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

丝印：GF3045MG；Package：TO-263；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C

文件：864.55 Kbytes 页数：3 Pages

RFERFE international

RFE国际公司RFE国际股份有限公司

丝印：GF30H60DF；Package：TO-220FP；600 V, 30 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.95033 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：GF30NC60S；Package：TO-220FP；30 A, 600 V, fast IGBT

Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching ■ Low on-voltage drop (VCE(sat)) ■ High current capability Application Motor drive Description This device utilizes the advanced PowerMESH™ process resulting in an excellent trade-off betw

文件：497.21 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：GF3HF60HD；Package：TO-220FP；4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

文件：1.32745 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

丝印：GF3NC120HD；Package：TO-220FP；7 A, 1200 V very fast IGBT with ultrafast diode

Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. Features ■ High voltage capability ■ High speed ■ Very soft ult

文件：769.83 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：GF35HF60W；Package：TO-220FP；35 A, 600 V Ultrafast IGBT

文件：639.12 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：GF3045MG；Package：TO-263；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C

文件：864.55 Kbytes 页数：3 Pages

RFERFE international

RFE国际公司RFE国际股份有限公司

SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURES * GPRC (Glass Passivated Rectifier Chip) inside * Glass passivated cavity-free junction * Ideal for surface mount automotive applications * Built-in strain relief * Easy pick an place * High temperature soldering

文件：61.02 Kbytes 页数：2 Pages

ZOWIE

智威

30.0A SALAR BYPASS DIODE

Features Schottky Barrier Chip Classification Rating 94V-O Plastic Case Material has UL Flammability Guard Ring Die Construction For Use in Salar Bypass Inverse-plarity Protection Application Low Power Loss, High Efficiency Ideally Suited for Automatic Assembly

文件：634.48 Kbytes 页数：4 Pages

ZSELEC

淄博圣诺