丝印：GF5H60DF；Package：TO-220FP；Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequen

文件：872.71 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体