| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
4URackmountChassiswithFrontUSBandPS/2Interfaces | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
Economical4URackmountChassiswithFront-AccessibleUSBandPS/2Interfaces | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor | VishayVishay Siliconix 威世科技 | Vishay | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio | VishayVishay Siliconix 威世科技 | Vishay | ||
N-ChannelPowerMOSFETs,5.5A,60-100V N-ChannelPowerMOSFETs,5.5A,60-100V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
4.9A,and5.6A,80Vand100V,0.54and0.74Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | HARRIS HARRIS corporation | HARRIS | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A) HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET 5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
RepetitiveAvalancheRated | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMosfets | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-ChannelEnhancement-ModeVerticalDMOSPowerFETs N-ChannelEnhancement-ModeVerticalDMOSPowerFETs | SUTEX Supertex, Inc | SUTEX | ||
AdvancedPowerMOSFET FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •175°COperatingTemperature •LowerLeakageCurrent:10μA(Max.)@VDS=100V •LowerRDS(ON):0.289Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET 5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio | VishayVishay Siliconix 威世科技 | Vishay | ||
AdvancedPowerMOSFET FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •175°COperatingTemperature •LowerLeakageCurrent:10μA(Max.)@VDS=100V •LowerRDS(ON):0.289Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A) HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
RepetitiveAvalancheRated | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GEM-MICR |
21+ROHS |
SOT-26 |
54000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Gem-micr |
23+ |
SOT-26 |
45000 |
原装正品现货 |
询价 | ||
RedLionControls |
新 |
7 |
全新原装 货期两周 |
询价 | |||
Red Lion Controls |
2022+ |
3 |
全新原装 货期两周 |
询价 | |||
N/A |
22+ |
QFP |
3600 |
绝对原装!现货热卖! |
询价 | ||
MEANWELL |
1000 |
询价 | |||||
MEAN WELL |
21+ |
A/N |
8750 |
只做原装,常备优势库存,询价必回 |
询价 | ||
GTM |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ST |
1844+ |
QFN |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
23+ |
QFN |
15000 |
一级代理原装现货 |
询价 |
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