I630

5mmx7mmCeramicPackageSMDVCXO,LVCMOS/LVPECL/LVDS

I630

9A200VN-channelEnhancementModePowerMOSFET

1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso

ICS-630

HIGHDIRECTIVITYCOLUMNSPEAKER

4인치전대역스피커유닛채택 매칭트랜스채용 옥외용,방수처리 BRACKET을이용한지향각조절용이

IIRF630N

N-ChannelMOSFETTransistor

IPC-630

NewGeneration4U15-SlotRackmountChassis

IRC630

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)

IRC630PBF

HEXFETPOWERMOSFET

HEXFET®PowerMOSFET

IRF630

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

IRF630

N-CHANNEL200V-0.35ihm-9A-TO-220/FPMESHOVERLAY]MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. Generalfeatures ■Extremelyhighdv/dtcapability ■Verylowintrinsic

IRF630

9A,200V,0.400Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas