650V/30A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：240.22 Kbytes 页数：12 Pages

STARPOWER

斯达半导体

650V/30A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：298.25 Kbytes 页数：12 Pages

STARPOWER

斯达半导体

650V/30A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：656.29 Kbytes 页数：13 Pages

STARPOWER

斯达半导体

650V/30A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：670.21 Kbytes 页数：13 Pages

STARPOWER

斯达半导体

650V/30A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：466.84 Kbytes 页数：10 Pages

STARPOWER

斯达半导体

650V/30A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：556.1 Kbytes 页数：12 Pages

STARPOWER

斯达半导体

650V 30A SiC Schottky MPS??Diode

文件：469.02 Kbytes 页数：7 Pages

GENESIC

650V 30A SiC Schottky MPS??Diode

文件：530.45 Kbytes 页数：7 Pages

GENESIC

1200V 30A SiC Schottky MPS??Diode

文件：304.05 Kbytes 页数：6 Pages

GENESIC

1200V IGBT模块

额定电压: 1200V\n额定电流: 300A\n电路结构: Chopper\n芯片系列: K Standard IGBT;

StarPower

斯达半导体