650V/300A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features  Low VCE(sat) trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

文件：427.16 Kbytes 页数：11 Pages

STARPOWER

斯达半导体

1200V/300A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positiv

文件：212.08 Kbytes 页数：11 Pages

STARPOWER

斯达半导体

1200V/300A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positiv

文件：211.69 Kbytes 页数：11 Pages

STARPOWER

斯达半导体

1200V/300A 1 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

文件：222.45 Kbytes 页数：9 Pages

STARPOWER

斯达半导体

650V/300A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features  Low VCE(sat) trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

文件：480.48 Kbytes 页数：11 Pages

STARPOWER

斯达半导体

650V/30A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：493.69 Kbytes 页数：9 Pages

STARPOWER

斯达半导体

650V/30A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

文件：548.66 Kbytes 页数：11 Pages

STARPOWER

斯达半导体

650V/30A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

文件：573.77 Kbytes 页数：11 Pages

STARPOWER

斯达半导体

SIC Schottky Diode

DESCRIPTION · High surge current capability · Fast Switching · Low Thermal Resistance APPLICATIONS · Solar inverter · Power Factor Correction (PFC) · Switch mode power supply

文件：427.22 Kbytes 页数：2 Pages

ISC

无锡固电

650V/30A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

文件：323.12 Kbytes 页数：13 Pages

STARPOWER

斯达半导体