SiC 碳化硅肖特基二极管

GWOKSEMI

国晶微

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

文件：1.33516 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

文件：1.33516 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

文件：1.33516 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子