S3D12065A

650V SIC POWER SCHOTTKY RECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100%PureTin “-A”isanAEC-Q101qualifieddevice Pb−

S3D12065A

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-220-2 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY SILICON CARBIDE S

C3D12065A

3rdGeneration650V,12ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

C3D12065A

650VoltSchottkyRectifier

S3D12065G

650VSICPOWERSCHOTTKYRECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100%PureTin “-A”isanAEC-Q101qualifieddevice Pb−

S3D12065GTR

650VSICPOWERSCHOTTKYRECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100%PureTin “-A”isanAEC-Q101qualifieddevice Pb−