Discrete SiC Schottky Diodes

SMC

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

文件：1.33516 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

文件：1.33516 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

3rd Generation 650 V, 12 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.6658 Mbytes 页数：9 Pages

WOLFSPEED

650 Volt Schottky Rectifier

文件：853.97 Kbytes 页数：6 Pages

Cree

科锐

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

文件：1.33516 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子