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MGP11N60E

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP11N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MGP11N60ED

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半导体安森美半导体公司

OM11N60

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRF

International Rectifier

PCFC11N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PSM11N60CT

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

PSM11N60CTF

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

SIHH11N60E

ESeriesPowerMOSFET

FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半导体

供应商型号品牌批号封装库存备注价格
GOFORD(谷峰)
2447
TO-220F
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
询价
GOFORD(谷峰)
20+
TO-220F-3
50
询价
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
询价
GOFORD
2007202208
TO-252
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NK/南科功率
2025+
TO-252
986966
国产
询价
23+
65480
询价
ELECTROMED
24+
SMD
20000
一级代理原装现货假一罚十
询价
ELECTROMED
24+
SOP24
41
大批量供应优势库存热卖
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
更多GC11N60F供应商 更新时间2025-7-29 15:01:00