| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
GLASSPASSIVATEDBRIDGERECTIFIERS REVERSEVOLTAGE-50to1000VoltsFORWARDCURRENT-8.0Amperes FEATURES ●Surgeoverloadrating-175amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | HY | ||
GLASSPASSIVATEDBRIDGERECTIFIERS | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | HY | ||
GLASSPASSIVATEDBRIDGERECTIFIERS FEATURES ●Surgeoverloadrating-175amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any | Good-Ark Good-Ark | Good-Ark | ||
GlassPassivatedBridgeRectifiers | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | HY | ||
GLASSPASSIVATEDBRIDGERECTIFIERS | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | HY | ||
TouchKey TheBS801B/02B/04B/06B/08Barearangeof1to8keytouchkeydeviceswhichcandetecthumanbodycontactusingexternaltouchpads.Thehighlevelofdeviceintegrationenableapplicationstobeimplementedwithaminimumnumberofexternalcomponents. *Operatingvoltage:2.2V~5.5V *Ultra | HoltekHolmate Technology Corp. (Holtek) 合泰 | Holtek | ||
TouchKey GeneralDescription TheBS801C/02C/04C/06C/08Carearangeof1to8keytouchkeydeviceswhichcandetecthumanbodycontactusingexternaltouchpads.Thehighlevelofdeviceintegrationenableapplicationstobeimplementedwithaminimumnumberofexternalcomponents. Features Op | HoltekHolmate Technology Corp. (Holtek) 合泰 | Holtek | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=700V(Min) ·HighSwitchingSpeed APPLICATIONS ·Designedforuseinthree-phaseACmotorcontrolsystems | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTON | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTON DESCRIPTION TheBU808DFIisaNPNtransistorinmonolithicDarlingtonconfiguration.ItismanufacturedusingMultiepitaxialMesatechnologyforcost-effectivehighperformance. ■STMicroelectronicsPREFERREDSALESTYPE ■NPNMONOLITHICDARLINGTONWITHINTEGRATEDFREE-WHEELINGDIODE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
8.0AGLASSPASSIVATEDBRIDGERECTIFIER Features ●GlassPassivatedDieConstruction ●HighCaseDielectricStrengthof1500VRMS ●LowReverseLeakageCurrent ●SurgeOverloadRatingto200APeak ●IdealforPrintedCircuitBoardApplications ●ULListedUnderRecognizedComponent Index,FileNumberE94661 ●LeadFreeFinish, | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
8AMPSILICONBRIDGERECTIFIER FEATURES ●Ratingto1000VPRV ●Idealforprintedcircuitboard ●Surgeoverloadrating300Amperespeak ●Reliablelowcostconstructionutilizingmoldedplastictechnique ●PlasticmaterialhasUL ●ULrecognized:File#E106441 ●ULrecognized94V-Oplasticmaterial | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
8.0ABRIDGERECTIFIER Features •DiffusedJunction •LowForwardVoltageDrop •HighCurrentCapability •HighReliability •HighSurgeCurrentCapability •IdealforPrintedCircuitBoards •ULRecognizedFile#E157705 | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
SINGLEPHASE8.0AMPS.GLASSPASSIVATEDBRIDGERECTIFIERS FEATURES *Idealforprintedcircuitboard *Reliablelowcostconstruction *PlasticmaterialhasUnderwritersLaboratoryflammabilityclassifications94V.O *Surgeoverloadrating200amperespeak. | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | JGD | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTONTRANSISTOR DESCRIPTION TheBU808DFHisaNPNtransistorinmonolithicDarlingtonconfiguration.ItismanufacturedusingMultiepitaxialMesatechnologyforcost-effectivehighperformance. ■NEWFullyPlasticTO-220forHIGHVOLTAGEAPPLICATIONS ■NPNMONOLITHICDARLINGTONWITHINTEGRATEDFREE-WHEELINGD | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTON DESCRIPTION TheBU808DFIisaNPNtransistorinmonolithicDarlingtonconfiguration.ItismanufacturedusingMultiepitaxialMesatechnologyforcost-effectivehighperformance. ■STMicroelectronicsPREFERREDSALESTYPE ■NPNMONOLITHICDARLINGTONWITHINTEGRATEDFREE-WHEELINGDIODE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTON | SUNSPIRITSunspirit Electronic Ltd 顺思电子佛山市顺德区顺思电子有限公司 | SUNSPIRIT | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTON DESCRIPTION TheBU808DFPisaNPNtransistorinmonolithicDarlingtonconfiguration.ItismanufacturedusingMultiepitaxialMesatechnologyforcost-effectivehighperformance. ■STMicroelectronicsPREFERREDSALESTYPE ■NPNMONOLITHICDARLINGTONWITHINTEGRATEDFREE-WHEELINGDIODE ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTONTRANSISTOR nSTMicroelectronicsPREFERRED SALESTYPE nNPNMONOLITHICDARLINGTONWITH INTEGRATEDFREE-WHEELINGDIODE nHIGHVOLTAGECAPABILITY(>1400V) nHIGHDCCURRENTGAIN(TYP.150) nFULLYINSULATEDPACKAGE(U.L. COMPLIANT)FOREASYMOUNTING nLOWBASE-DRIVEREQUIREMENTS nDEDICATEDAPPLICATIO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERDARLINGTONTRANSISTOR | SUNSPIRITSunspirit Electronic Ltd 顺思电子佛山市顺德区顺思电子有限公司 | SUNSPIRIT |
产品属性
- 产品编号：
GBU808G
- 制造商：
SMC Diode Solutions
- 类别：
分立半导体产品 > 二极管 - 桥式整流器
- 包装：
散装
- 二极管类型：
Single Phase
- 技术：
标准
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
4-ESIP
- 供应商器件封装：
GBU
- 描述：
BRIDGE RECT 1PHASE 800V 8A GBU
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEP? |
2020+ |
DIP-4 |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
询价 | ||
ADI/亚德诺 |
23+ |
MSOP8 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
Comchip Technology |
22+ |
GBU |
9000 |
原厂渠道,现货配单 |
询价 | ||
Comchip Technology |
21+ |
GBU |
13880 |
公司只售原装,支持实单 |
询价 | ||
SEP |
2022+ |
DIP-4 |
7300 |
原装现货 |
询价 | ||
SEP? |
2023+ |
DIP-4 |
16800 |
芯为科技只有原装 |
询价 | ||
JINGDAO/晶导微 |
20+ |
GBU |
12000 |
询价 | |||
SEP |
23+ |
DIP-4 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
SEP |
23+ |
DIP-4 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
SMC |
1809+ |
SIP-4 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
