HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

n STMicroelectronics PREFERRED SALESTYPE n NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE n HIGH VOLTAGE CAPABILITY (> 1400 V) n HIGH DC CURRENT GAIN (TYP. 150) n FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING n LOW BASE-DRIVE REQUIREMENTS n DEDICATED APPLICATIO

文件：266.1 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

文件：1.22414 Mbytes 页数：5 Pages

SUNSPIRIT

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

文件：59.88 Kbytes 页数：2 Pages

PANJIT

強茂

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

文件：65.4 Kbytes 页数：12 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

文件：65.4 Kbytes 页数：12 Pages

NEC

瑞萨