GAL22V10D规格书应用电路市场行情莱迪思-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
GAL22V10D	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-10LJNI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice

技术参数

延迟时间 tpd（1）最大值：
10ns
电源电压 - 内部：
4.5 V ~ 5.5 V
宏单元数：
10
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
28-LCC（J 形引线）
供应商器件封装：
28-PLCC（11.51x11.51）

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	GAL22V10D	Lattice(莱迪斯)	24+	标准封装	11848	原厂渠道供应,大量现货,原型号开票。	询价
深圳市壹芯创科技有限公司	GAL22V10D	LATTICE	22+	PLCC	2000	进口原装!现货库存	询价
上海金庆电子技术有限公司	GAL22V10D	LATTICE	新		2	全新原装货期两周	询价
深圳诚思涵科技有限公司	GAL22V10D	LATTICE	18+	DIP24	85600	保证进口原装可开17%增值税发票	询价
深圳市赛尔通科技有限公司	GAL22V10D	LAT	23+		65480		询价
中天科工半导体（深圳）有限公司	GAL22V10D		20+		36800	原装优势主营型号-可开原型号增税票	询价
深圳市河锋鑫科技有限公司	GAL22V10D	Lattice(莱迪斯)	2021/2022+	标准封装	3500	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市恒达亿科技有限公司	GAL22V10D	LATTICE	25+	PLCC	3200	全新原装、诚信经营、公司现货销售	询价
贸泽芯城（深圳）电子科技有限公司	GAL22V10D	LATTICE/莱迪斯	23+	DIP	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市能元时代电子有限公司	GAL22V10D		23+		27240	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

更多GAL22V10D供应商更新时间2025-12-10 23:00:00

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