GAL22V10D-25LJ技术资料参数批发采购-114ic电子网

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GAL22V10D-25LJ	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJ	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJ	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJI	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJN	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJN	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJNI	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LJNI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LP	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LP	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LP	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LPI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LPI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LPI	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LPN	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LPN	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LPNI	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice
GAL22V10D-25LPNI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl	LatticeLattice Semiconductor Corporation 莱迪思半导体	Lattice

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产品属性

产品编号：
GAL22V10D-25LJ
制造商：
Lattice Semiconductor Corporation
类别：
集成电路（IC） > CPLD（复杂可编程逻辑器件）
系列：
GAL®22V10
包装：
托盘
可编程类型：
EE PLD
供电电压 - 内部：
4.75V ~ 5.25V
工作温度：
0°C ~ 75°C（TA）
安装类型：
表面贴装型
封装/外壳：
28-LCC（J 形引线）
供应商器件封装：
28-PLCC（11.51x11.51）
描述：
IC CPLD 10MC 25NS 28PLCC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市环球伟业电子有限公司	GAL22V10D-25LJ		21+	LQFP64	12000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市福安瓯科技有限公司	GAL22V10D-25LJ	LATTICE	22+	PLCC28	276	⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙	询价
深圳市昌源伟业科技有限公司	GAL22V10D-25LJ	Lattice	15+	PLCC28	558	全新原装正品现货	询价
深圳市毅创腾电子科技有限公司	GAL22V10D-25LJ	LATTICE	23+	PLCC28	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市凯斯宇科技有限公司	GAL22V10D-25LJ	LATTICE	2022	PLCC	2058	原厂原装正品,价格超越代理	询价
深圳市一线半导体有限公司	GAL22V10D-25LJ			PLCC	100		询价
深圳市佳鑫美电子科技有限公司	GAL22V10D-25LJ	LATTICE	22+	PLCC28	2250	100%全新原装公司现货供应!随时可发货	询价
鑫勃源（上海北京青岛）有限公司	GAL22V10D-25LJ	Lattice	23+	PLCC28	18000		询价
深圳市星佑电子有限公司	GAL22V10D-25LJ	LAT	05+	原厂原装	4312	只做全新原装真实现货供应	询价
深圳市科恒伟业电子有限公司	GAL22V10D-25LJ	LATTICE	2016+	PLCC	4558	只做进口原装现货!假一赔十!	询价

更多GAL22V10D-25L供应商更新时间2024-5-29 11:42:00

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