首页 >GAL22V10D-25LPI>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
GAL22V10D-25LPI | Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-25LPI | GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-25LPI | High Performance E2CMOS PLD Generic Array Logic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-25LPI | All Devices Discontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-25LPI | All Devices Discontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-25LPI | 包装:散装 封装/外壳:24-DIP(0.300",7.62mm) 类别:集成电路(IC) CPLD(复杂可编程逻辑器件) 描述:IC CPLD 10MC 25NS 24DIP | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 |
产品属性
- 产品编号:
GAL22V10D-25LPI
- 制造商:
Lattice Semiconductor Corporation
- 类别:
集成电路(IC) > CPLD(复杂可编程逻辑器件)
- 系列:
GAL®22V10
- 包装:
散装
- 可编程类型:
EE PLD
- 供电电压 - 内部:
4.5V ~ 5.5V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
通孔
- 封装/外壳:
24-DIP(0.300",7.62mm)
- 供应商器件封装:
24-PDIP
- 描述:
IC CPLD 10MC 25NS 24DIP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LATTICE |
23+ |
DIP |
4800 |
主营LATTICE一级代理进口原装假一罚十特价 |
询价 | ||
LATTICE |
18+ |
PDIP |
60 |
现货正品专供军研究院 |
询价 | ||
Lattice |
0043D |
DIP-24 |
19 |
询价 | |||
LATTICE |
22+ |
DIP16 |
2200 |
绝对原装!真实库存! |
询价 | ||
LATTICE |
17+ |
DIP |
6200 |
100%原装正品现货 |
询价 | ||
LATTICE |
0148+ |
DIP24 |
1000 |
全新原装现货特价! |
询价 | ||
Lattice |
2015+ |
DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
LATTICE |
2017+ |
DIP |
25689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
Lattice |
23+ |
DIP |
18000 |
询价 | |||
LATTICE |
23+ |
DIP24 |
7750 |
全新原装优势 |
询价 |
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