GAL22V10D-15QJ规格书应用电路供应代理-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
GAL22V10D-15LJ	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	文件：386.45 Kbytes Page：29 Pages	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：386.45 Kbytes 页数：29 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJN	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJN	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJNI	文件：718.73 Kbytes Page：23 Pages	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice
GAL22V10D-15LJNI	文件：718.73 Kbytes Page：23 Pages	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l 文件：718.73 Kbytes 页数：23 Pages	Lattice 莱迪思	Lattice

产品属性

产品编号：
GAL22V10D-15QJ
制造商：
Lattice Semiconductor Corporation
类别：
集成电路（IC） > CPLD（复杂可编程逻辑器件）
系列：
GAL®22V10
包装：
散装
可编程类型：
EE PLD
供电电压 - 内部：
4.75V ~ 5.25V
工作温度：
0°C ~ 75°C（TA）
安装类型：
表面贴装型
封装/外壳：
28-LCC（J 形引线）
供应商器件封装：
28-PLCC（11.51x11.51）
描述：
IC CPLD 10MC 15NS 28PLCC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	GAL22V10D-15QJ	LATTICE/莱迪斯	2025+	PLCC28	5000	原装进口价格优请找坤融电子!	询价
深圳市毅创腾电子科技有限公司	GAL22V10D-15QJ	LATTICE	23+	PLCC28	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市凌旭科技有限公司	GAL22V10D-15QJ	LATTICE	2016+	PLCC28	5621	只做原装,假一罚十,内存,闪存,公司可开17%增值税	询价
深圳市一线半导体有限公司	GAL22V10D-15QJ	LATTICE	24+	PLCC28	29		询价
深圳市福田区绿盛电子商行	GAL22V10D-15QJ	Lattice	2015+	PLCC	19889	一级代理原装现货,特价热卖!	询价
深圳市福安瓯科技有限公司	GAL22V10D-15QJ	LATTICE	25+	PLCC28	5139	⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙	询价
齐创科技(上海,北京,青岛)有限公司	GAL22V10D-15QJ	LATTICE	23+	PLCC28	5000	原装正品,假一罚十	询价
深圳市恒创达实业有限公司	GAL22V10D-15QJ	lattice	17+	PLCC28	6200	100%原装正品现货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	GAL22V10D-15QJ	LATTICE	25+	QFP	18000	原厂直接发货进口原装	询价
深圳市壹芯创科技有限公司	GAL22V10D-15QJ	LATTICE	22+	PLCC	2000	进口原装!现货库存	询价

更多GAL22V10D-15供应商更新时间2025-11-18 15:08:00

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