首页 >GAL22V10D-15LJNI>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
GAL22V10D-15LJNI | Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-15LJNI | GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-15LJNI | All Devices Discontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-15LJNI | All Devices Discontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
GAL22V10D-15LJNI | 包装:管件 封装/外壳:28-LCC(J 形引线) 类别:集成电路(IC) CPLD(复杂可编程逻辑器件) 描述:IC CPLD 10MC 15NS 28PLCC | LatticeLattice Semiconductor Corporation 莱迪思半导体 | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | |||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 |
产品属性
- 产品编号:
GAL22V10D-15LJNI
- 制造商:
Lattice Semiconductor Corporation
- 类别:
集成电路(IC) > CPLD(复杂可编程逻辑器件)
- 系列:
GAL®22V10
- 包装:
管件
- 可编程类型:
EE PLD
- 供电电压 - 内部:
4.5V ~ 5.5V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
28-LCC(J 形引线)
- 供应商器件封装:
28-PLCC(11.51x11.51)
- 描述:
IC CPLD 10MC 15NS 28PLCC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LATTICE/莱迪斯 |
23+ |
PLCC28 |
98900 |
原厂原装正品现货!! |
询价 | ||
LATTICE |
23+ |
PLCC |
4800 |
主营LATTICE一级代理进口原装假一罚十特价 |
询价 | ||
Lattice |
17+ |
PLCC |
6200 |
100%原装正品现货 |
询价 | ||
Lattice |
23+ |
PLCC28 |
18000 |
询价 | |||
Lattice |
22+23+ |
PLCC |
17682 |
绝对原装正品全新进口深圳现货 |
询价 | ||
LatticeSemiconductorCorp |
18+ |
28-LCC(J-Lead) |
6500 |
CPLD国内唯一一家特供服务商。 |
询价 | ||
23+ |
N/A |
30350 |
正品授权货源可靠 |
询价 | |||
LatticeSemiconductorCorp |
23+ |
28-PLCC(11.51x11.51) |
66800 |
进口原装一级分销 |
询价 | ||
Lattice Semiconductor Corporat |
21+ |
28-LCC(J 形引线) |
370 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
最新 |
2000 |
原装正品现货 |
询价 |
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