首页 >GAL22V10D-10LJNLEADFREE>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LATTICE |
10+ |
PLCC |
6000 |
绝对原装自己现货 |
询价 | ||
LATTICE/莱迪斯 |
22+ |
PLCC28 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
LATTICE/莱迪斯 |
23+ |
PLCC-28 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
LATTICE/莱迪斯 |
2022 |
PLCC-28 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
LTT |
23+ |
SOP-16 |
5000 |
原装正品,假一罚十 |
询价 | ||
LTT |
23+ |
SOP-16 |
22567 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
LATTICE/莱迪斯 |
22+ |
PLCC28 |
354000 |
询价 | |||
LATTICE/莱迪斯 |
16+ |
1000 |
询价15919799957 |
询价 | |||
NXP/恩智浦 |
2021+ |
SOT143 |
1000 |
13632880263 |
询价 | ||
GAL |
22+ |
DIP-24 |
5000 |
进口原装!现货库存 |
询价 |
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