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GAL22V10D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LP

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LP

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

供应商型号品牌批号封装库存备注价格
LATTICE
10+
PLCC
6000
绝对原装自己现货
询价
LATTICE/莱迪斯
22+
PLCC28
20000
保证原装正品,假一陪十
询价
LATTICE/莱迪斯
23+
PLCC-28
50000
全新原装正品现货,支持订货
询价
LATTICE/莱迪斯
2022
PLCC-28
80000
原装现货,OEM渠道,欢迎咨询
询价
LTT
23+
SOP-16
5000
原装正品,假一罚十
询价
LTT
23+
SOP-16
22567
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
LATTICE/莱迪斯
22+
PLCC28
354000
询价
LATTICE/莱迪斯
16+
1000
询价15919799957
询价
NXP/恩智浦
2021+
SOT143
1000
13632880263
询价
GAL
22+
DIP-24
5000
进口原装!现货库存
询价
更多GAL22V10D-10LJNLEADFREE供应商 更新时间2024-6-4 16:45:00