丝印：G65P06；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：652.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G65P06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：634.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G65P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：668.47 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G65P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：665.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G65P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：670.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G65P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：652.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：DFN5/6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G65P06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：634.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G65P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：668.47 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G65P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G65P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：665.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体