Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

文件：448.18 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：G4M65DF2；Package：DPAK；Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

文件：448.18 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.16759 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

文件：448.18 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.09091 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体