G4PH50UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packagedwithHEXFREDTMultrafast, ult

IRG4PH50

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.78V,@Vge=15V,Ic=24A)

Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packagedwithHEXFREDTMultrafast, ult

IRG4PH50K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=2.77V,@Vge=15V,Ic=24A)

INSULATEDGATEBIPOLARTRANSISTOR Features ●Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V ●Combineslowconductionlosseswithhighswitchingspeed ●Latestgenerationdesignprovidestighterparameterdistributionandhigherefficien

IRG4PH50KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.77V,@Vge=15V,Ic=24A)

G5108

GMT
MSOP-8