INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

Features •Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications •Industry-benchmark switching losses improve efficiency of all power supply topologies •50 reduction of Eoff parameter •Low IGBT conduction losses •Latest-generation IGBT design

文件：139.38 Kbytes 页数：8 Pages

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INSULATED GATE BIPOLAR TRANSISTOR

文件：275.6 Kbytes 页数：9 Pages

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INSULATED GATE BIPOLAR TRANSISTOR

文件：287.76 Kbytes 页数：8 Pages

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off

文件：167.27 Kbytes 页数：8 Pages

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

文件：137.95 Kbytes 页数：8 Pages

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s

文件：412.64 Kbytes 页数：10 Pages

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