丝印：G4616；Package：SOP-8；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application l Power switch l DC/DC converters

文件：928.16 Kbytes 页数：10 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：1.84608 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON)

文件：3.13403 Mbytes 页数：7 Pages

KEXIN

科信电子

Dual 8A per Channel Low VIN DC/DC 關Module

文件：308.89 Kbytes 页数：24 Pages

LINER

凌力尔特