首页 >G374A>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

HCS374K/SAMPLE

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCT374

OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPS

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

HCT-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTR-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374DTR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-time

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
TI
02+
SSOP20
2000
询价
PHIEIPS
22+
SMD
3200
绝对原装自家现货!真实库存!欢迎来电!
询价
GILBERT
1
全新原装 货期两周
询价
N/A
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CW
20+
开关元件
2896
就找我吧!--邀您体验愉快问购元件!
询价
GLOBESPA
22+
QFP
2000
原装正品现货
询价
IDEA
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
G378B/Y2+G2
673
673
询价
ST
23+
BGA
5000
原装正品,假一罚十
询价
ST
23+
BGA
18000
询价
更多G374A供应商 更新时间2024-5-17 16:30:00